, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn darlingtion power transistor PMD10K100 description ? high dc current gain ? collector-emitter sustaining voltage- vceo(sus)=100v(min) ? complement to type pmd11k100 applications ? designed for general purpose amplifier and low frequency switching applications absolute maximum ratings(tc=25c) symbol vcbo vceo vebo ic icp ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current -continuous collector current-peak base current collector power dissipation@tc=25'c junction temperature storage temperature value 100 100 5.0 12 20 0.2 150 150 -65-200 unit v v v a a a w gc 'c thermal characteristics symbol rth j-c parameter thermalresistance, junction to case max 1.17 unit ?c/w r1 r2 pin 1.base 2. emitter 3. collect or (case) to-3 package dim a b c d e <* h ft l h g u v nun un i max 3900 25.30 7.80 0.90 1 40 26 7 8.30 1 10 160 1052 548 11.40 16.75 19.40 4.00 30m 4.30 13.50 17.05 19.62 420 3020 450 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn darlingtion power transistor PMD10K100 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat) vse(sat) vbejor) icer iebo hfe fr cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cut-off current dc current gain current-gain ? bandwidth product output capacitance conditions lc= 100ma; ib= 0 lc= 6a; ib= 24ma lc= 6a; ib= 24ma lc= 6a; vc6= 3v vce=100v;rbe=1kq vce= 1 00v; rbe= 1 k q , tc=1 50"c veb= 5v; lc= 0 lc= 6a; voe= 3v lc= 5a; vce= 3v, f= 1khz le=0;vcb=10v;ftest= 1.0mhz min 100 1000 4 max 2.0 2.8 2.8 1.0 5.0 2.0 20000 300 unit v v v v ma ma mhz pf
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